DEFECT STRUCTURE OF ZNSE-GA

被引：25

作者：

RAY, AK ^{[1
]}

KROGER, FA ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期

关键词：

D O I：

10.1149/1.2131677

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1355 / 1361

页数：7

共 21 条

[1] SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE [J].

AVEN, M ;

MARPLE, DTF ;

SEGALL, B .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2261-&

[2]

AVEN M, 1965, PHYS REV, V137, P228

[3] FREE-CARRIER ABSORPTION OF NORMAL-TYPE ZNSE-AL [J].

DUTT, BV ;

KIM, OK ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2110-2111

[4] MOBILITY OF ELECTRONS IN ZNSE PREPARED BY DIRECT FUSION [J].

FUKUDA, Y ;

FUKAI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (04) :902-&

[5]

Hershman GH, 1970, J SOLID STATE CHEM, V2, P483, DOI 10.1016/0022-4596(70)90042-3

[6] ELECTRICAL-PROPERTIES OF ZINC SELENIDE [J].

JONES, G ;

WOODS, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (05) :799-810

[7] Measurement on gallium- and indium-compounds X Gallium and Indium chalcogenides [J].

Klemm, W ;

von Vogel, HU .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1934, 219 (01) :45-64

[8] SOME CHARACTERISTICS OF FORMATION OF HIGH CONDUCTIVITY P-LAYERS IN ZNSE AND ZNSXSE1-X [J].

KUN, ZK ;

ROBINSON, RJ .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) :23-35

[9] OPTICAL-ABSORPTION EDGE OF A NEW GASE POLYTYPE [J].

LETOULLEC, R ;

BALKANSKI, M ;

BESSON, JM ;

KUHN, A .

PHYSICS LETTERS A, 1975, 55 (04) :245-246

[10]

LIND EL, 1959, B AM PHYS SOC, V4, P134

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