MECHANISMS FOR THE OPTICALLY DETECTED MAGNETIC-RESONANCE BACKGROUND SIGNAL IN EPITAXIAL GAAS

被引：23

作者：

WANG, FP

MONEMAR, B

AHLSTROM, M

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.11195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11195 / 11198

页数：4

共 12 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] IMPACT IONIZATION OF EXCITONS IN GAAS [J].

BLUDAU, W ;

WAGNER, E .

PHYSICAL REVIEW B, 1976, 13 (12) :5410-5414

[3] OPTICAL-DETECTION OF CYCLOTRON-RESONANCE IN GAP AND ZNTE [J].

BOOTH, IJ ;

SCHWERDTFEGER, CF .

SOLID STATE COMMUNICATIONS, 1985, 55 (09) :817-822

[4] OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) INVESTIGATIONS OF RECOMBINATION PROCESSES IN SEMICONDUCTORS [J].

CAVENETT, BC .

ADVANCES IN PHYSICS, 1981, 30 (04) :475-538

[5]

CAVENETT BC, 1985, PHYS REV B, V32, P8419

[6] OPTICALLY DETECTED MAGNETIC-RESONANCE OF NONRADIATIVE RECOMBINATION VIA THE ASGA ANTISITE IN P-TYPE GAAS [J].

GISLASON, HP ;

WATKINS, GD .

PHYSICAL REVIEW B, 1986, 33 (04) :2957-2960

[7]

LAX M, 1960, PHYS REV, V120, P376

[8] OPTICALLY DETECTED ELECTRON-CYCLOTRON RESONANCE IN SILICON [J].

PAKULIS, EJ ;

NORTHROP, GA .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1672-1674

[9] OPTICAL-DETECTION OF CYCLOTRON-RESONANCE IN SEMICONDUCTORS [J].

ROMESTAIN, R ;

WEISBUCH, C .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2067-2070

[10]

SCHMIDT I, 1966, J APPL PHYS, V37, P3719

← 1 2 →