NONRESONANT ELECTRON AND HOLE TUNNELING TIMES IN GAAS/AL0.35GA0.65AS ASYMMETRIC DOUBLE QUANTUM WELLS

被引：89

作者：

NIDO, M ^{[1
]}

ALEXANDER, MGW ^{[1
]}

RUHLE, WW ^{[1
]}

SCHWEIZER, T ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.102783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by a semiclassical model. Additional efficient hole tunneling is observed in the 3 nm barrier sample, and the time constant is of the order of 50 ps.

引用

页码：355 / 357

页数：3

共 21 条

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