IMPROVED HOT-CARRIER IMMUNITY IN CMOS ANALOG DEVICE WITH N2O-NITRIDED GATE OXIDES

被引:7
作者
LO, GQ [1 ]
AHN, J [1 ]
KWONG, DL [1 ]
机构
[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712
关键词
D O I
10.1109/55.192793
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the hot-carrier effects on analog device performance parameters in CMOS devices with N2O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that N2O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFET's. In addition, comparison analog and digital device performance degradations has also been made.
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页码:457 / 459
页数:3
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