IMPROVED HOT-CARRIER IMMUNITY IN CMOS ANALOG DEVICE WITH N2O-NITRIDED GATE OXIDES

被引：7

作者：

LO, GQ ^{[1
]}

AHN, J ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the hot-carrier effects on analog device performance parameters in CMOS devices with N2O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that N2O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFET's. In addition, comparison analog and digital device performance degradations has also been made.

引用

页码：457 / 459

页数：3

共 13 条

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