ACCOMMODATION OF STRAIN IN ULTRATHIN INAS/GAAS FILMS

被引：30

作者：

WOICIK, JC ^{[1
]}

PELLEGRINO, JG ^{[1
]}

SOUTHWORTH, SH ^{[1
]}

SHAW, PS ^{[1
]}

KARLIN, BA ^{[1
]}

BOULDIN, CE ^{[1
]}

MIYANO, KE ^{[1
]}

机构：

[1] CUNY BROOKLYN COLL, DEPT PHYS, BROOKLYN, NY 11210 USA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.52.R2281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray standing-wave and extended x-ray-absorption fine-structure measurements have determined the strain and bond distortions in a buried InAs monolayer grown epitaxially on GaAs(001). The In atoms are found to reside 1.64+/-0.03 Angstrom above the last-As plane of the GaAs substrate with an In-As bond length of 2.57+/-0.02 Angstrom. Relative to bulk InAs, this corresponds to an 8% expansion in the In-As planar distance perpendicular to the interface and a 0.05-Angstrom compression in the In-As bond length. This experiment indicates that macroscopic-elastic theory describes the distortions in InAs/GaAs(001) films even in the monolayer limit.

引用

收藏

页码：R2281 / R2284

页数：4

相关论文

共 14 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].

BATTERMAN, BW ;

COLE, H .

REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&

[3] IS THERE AN ELASTIC ANOMALY FOR A (001) MONOLAYER OF INAS EMBEDDED IN GAAS [J].

BERNARD, JE ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :165-167

[4] BREAKDOWN OF CONTINUUM ELASTICITY THEORY IN THE LIMIT OF MONATOMIC FILMS [J].

BRANDT, O ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M .

PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1339-1342

[5] X-RAY STANDING-WAVE AND HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE GAAS/INAS/GAAS(100) HETEROINTERFACE [J].

GIANNINI, C ;

TAPFER, L ;

LAGOMARSINO, S ;

BOULLIARD, JC ;

TACCOEN, A ;

CAPELLE, B ;

ILG, M ;

BRANDT, O ;

PLOOG, KH .

PHYSICAL REVIEW B, 1993, 48 (15) :11496-11499

[6] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[7] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].

MARTIN, RM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+

[8] OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS [J].

MASSIES, J ;

GRANDJEAN, N .

PHYSICAL REVIEW LETTERS, 1993, 71 (09) :1411-1414

[9] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS [J].

MIKKELSEN, JC ;

BOYCE, JB .

PHYSICAL REVIEW B, 1983, 28 (12) :7130-7140

[10] ANHARMONIC TEMPERATURE FACTORS, ANOMALOUS-DISPERSION EFFECTS AND BONDING CHARGES IN GALLIUM-ARSENIDE [J].

SARAVANAN, R ;

MOHANLAL, SK ;

CHANDRASEKARAN, KS .

ACTA CRYSTALLOGRAPHICA SECTION A, 1992, 48 :4-9