OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS

被引：132

作者：

MASSIES, J

GRANDJEAN, N

机构：

[1] Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Sophia-Antipolis

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.71.1411

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragonal elastic distortion occurs at the free edges of 2D monolayer islands. Numerical relaxation using a simplified model of interatomic forces gives the correct order of magnitude of the strain relaxation by this process.

引用

页码：1411 / 1414

页数：4

共 14 条

[1] BREAKDOWN OF CONTINUUM ELASTICITY THEORY IN THE LIMIT OF MONATOMIC FILMS
BRANDT, O
PLOOG, K
BIERWOLF, R
HOHENSTEIN, M
[J]. PHYSICAL REVIEW LETTERS, 1992, 68 (09) : 1339 - 1342
[2] STRAIN INDUCED 2D-3D GROWTH MODE TRANSITION IN MOLECULAR-BEAM EPITAXY OF INXGA1-XAS ON GAAS (001)
CESCHIN, AM
MASSIES, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 693 - 699
[3] CRITICAL THICKNESS IN EPITAXIAL CDTE/ZNTE
CIBERT, J
GOBIL, Y
DANG, LS
TATARENKO, S
FEUILLET, G
JOUNEAU, PH
SAMINADAYAR, K
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (03) : 292 - 294
[4] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
EAGLESHAM, DJ
CERULLO, M
[J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
[5] DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS
GRANDJEAN, N
MASSIES, J
ETGENS, VH
[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (05) : 796 - 799
[6] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100)
GUHA, S
MADHUKAR, A
RAJKUMAR, KC
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2110 - 2112
[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &
[8] LUDEKE R, 1985, TECHNOLOGY PHYSICS M, P555
[9] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS
MARTIN, RM
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +
[10] MONTE-CARLO SIMULATION OF MBE GROWTH OF THE 2X4 RECONSTRUCTED GAAS(001) SURFACE
MCCOY, JM
MAKSYM, PA
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 178 - 183

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