MONTE-CARLO SIMULATION OF MBE GROWTH OF THE 2X4 RECONSTRUCTED GAAS(001) SURFACE

A Monte Carlo model is used to simulate the MBE growth of the As-stabilized GaAs(001)2 x 4 surface. Atomistic detail of the bilayer growth cycle, derived from a proposed model of the growth, is incorporated in a phenomenological manner. Despite the large size of the reconstructed unit cell, this approach is not significantly more computationally-demanding in the updating of rates than simulations which neglect the reconstruction and the atomistic growth model details. Preliminary results indicate that the inclusion of these additional ingredients in the simulation produces significant differences in the growth surface. Simulated growth of the 2 x 4 system produces surfaces which reproduce features reported in STM studies of the real surface.