MELT DYNAMICS OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING

被引：28

作者：

THOMPSON, MO

GALVIN, GJ

MAYER, JW

PEERCY, PS

HAMMOND, RB

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] UNIV CALIF LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87544

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.93965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：445 / 447

页数：3

共 16 条

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[Anonymous], 1982, LASER ANNEALING SEMI

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[6] TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALING [J].

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THOMPSON, MO ;

MAYER, JW ;

PEERCY, PS ;

HAMMOND, RB ;

PAULTER, N .

PHYSICAL REVIEW B, 1983, 27 (02) :1079-1087

[7] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

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PEERCY, PS .

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[8]

JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[9] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

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APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[10]

PEERCY PS, 1982, APPL PHYS LETT, V40, P768

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