EFFECT OF ANNEALING ON AN AMORPHOUS GEXTE1-X MATRIX WITH TE CRYSTALLITES

被引：13

作者：

DENEUVILLE, A ^{[1
]}

GERARD, P ^{[1
]}

DEVENYI, J ^{[1
]}

机构：

[1] CNRS,GRP TRANSITIONS PHASES,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1976年 / 22卷 / 01期

关键词：

D O I：

10.1016/0022-3093(76)90009-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：77 / 88

页数：12

共 17 条

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[3] DC ELECTRICAL, OPTICAL AND PHOTOELECTRICAL PROPERTIES OF GEX TE1-X AMORPHOUS THIN-FILMS [J].

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[5]

Fisher G. B., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P621

[6] PHOTOCONDUCTIVITY AND DENSITY OF STATES FOR AMORPHOUS GETE [J].

HOWARD, WE ;

TSU, R .

PHYSICAL REVIEW B, 1970, 1 (12) :4709-&

[7] THERMAL BEHAVIOR OF NONCRYSTALLINE SPUTTERED FILMS IN SYSTEM GE-TE [J].

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ROY, R .

MATERIALS RESEARCH BULLETIN, 1971, 6 (08) :749-&

[8]

MESSIER R, 1971, J NONCRYSTALL SOLIDS, V8, P816

[9]

MORGAN M, 1971, THIN SOLID FILMS, V9, P67

[10]

MOSS SC, 1972, MATER RES B, P423

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