VUV AND SOFT-X-RAY PHOTOEMISSION-STUDIES OF ELECTRONIC AND ATOMIC STRUCTURES OF METAL-OVERLAYERS ON SILICON SURFACES

被引：4

作者：

KONO, S

ENTA, Y

ABUKAWA, T

NAKAMURA, N

ANNO, K

SUZUKI, S

机构：

[1] Department of Physics, Tohoku University, Sendai

来源：

PHYSICA SCRIPTA | 1990年 / T31卷

关键词：

D O I：

10.1088/0031-8949/1990/T31/013

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic and atomic structures of ordered metal-overlayers on Si(111) and Si(001) surfaces have been investigated by angle-resolved photoelectron spectroscopy. In the VUV photon energy region, angle-resolved photoemission has given us information about surface-state dispersion, and in the soft x-ray region, angle-resolved photoemission has given us information about surface atomic geometry. Metal overlayers treated are those of elements in the periodic table of Columns Ia, Ib, IIIb, IVb, IVb/Vb and VIb; surface orders treated are 3 × 3 on the Si(111) surface and 2 × 1 on the Si(001) surface. © 1990 IOP Publishing Ltd.

引用

页码：96 / 102

页数：7

共 68 条

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