MODEL DIELECTRIC FUNCTIONS FOR NATIVE OXIDES ON COMPOUND SEMICONDUCTORS

被引：113

作者：

ZOLLNER, S ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS & ASTRON,AMES,IA 50011

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analytical models with eight parameters have been found which describe the dielectric functions of native or electrochemically grown oxide layers on the compound semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb in the 1.6 to 5.6 eV photon energy range. These model functions agree with the experimental optical constants to within the accuracy of the measurements. They will be useful for the design and analysis of semiconductor laser structures, solar cells, and other electro-optical devices.

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页码：2523 / 2524

页数：2

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