DEFECT PRODUCTION AND ANNEALING DUE TO RELAXATION OF ELECTRON EXCITATIONS IN FAST ION TRACKS

被引：3

作者：

URMANOV, AR

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1991年 / 166卷 / 01期

关键词：

D O I：

10.1002/pssb.2221660102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A mechanism of defect production and annealing due to irradiation with high-energy ions is proposed. It is shown that the degree of damage on the subsurface region of a crystal is determined by competition of two processes: migration of defects from the depth to the crystal surface and their recombination due to an increase in the mobility of defect-forming atoms and vacancies.

引用

页码：9 / 14

页数：6

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