RESONANCE RAMAN-SCATTERING IN INSB - DEFORMATION POTENTIALS AND INTERFERENCE EFFECTS AT THE E1 GAP

被引：18

作者：

MENENDEZ, J

VINA, L

CARDONA, M

ANASTASSAKIS, E

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.32.3966

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3966 / 3973

页数：8

共 29 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2]

BAUHOFER W, COMMUNICATION

[3]

CARDONA M, 1982, TOP APPL PHYS, V50, P19

[4] RESONANT RAMAN SCATTERING IN GERMANIUM [J].

CERDEIRA, F ;

CARDONA, M ;

DREYBRODT, W .

SOLID STATE COMMUNICATIONS, 1972, 10 (07) :591-+

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6] ORIENTATION-DEPENDENT RESONANT RAMAN-SCATTERING IN INSB AND GASB AT E1-E1+DELTA1 REGION [J].

DREYBRODT, W ;

RICHTER, W ;

CERDEIRA, F ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 60 (01) :145-156

[7] RESONANT RAMAN SCATTERING IN INSB IN E1-E1+DELTA1 REGION [J].

DREYBRODT, W ;

RICHTER, W ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1972, 11 (09) :1127-+

[8] MECHANISM OF STRONG RESONANT 1LO RAMAN-SCATTERING [J].

GOGOLIN, AA ;

RASHBA, EI .

SOLID STATE COMMUNICATIONS, 1976, 19 (12) :1177-1179

[9] RESONANT SURFACE RAMAN SCATTERING IN DIRECT-GAP SEMICONDUCTORS [J].

LEITE, RCC ;

SCOTT, JF .

PHYSICAL REVIEW LETTERS, 1969, 22 (04) :130-&

[10] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND THE INTERBAND CRITICAL-POINTS OF INSB [J].

LOGOTHETIDIS, S ;

VINA, L ;

CARDONA, M .

PHYSICAL REVIEW B, 1985, 31 (02) :947-957

← 1 2 3 →