CHEMICALLY-INDUCED SHIFTS IN THE PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON

被引：69

作者：

LI, KH

TSAI, C

SARATHY, J

CAMPBELL, JC

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The observation of photoluminescence (PL) spectral shifts during anodization of porous Si and after immersion in different chemical solutions is reported. These shifts in the PL spectra are attributed to changes in the surface chemistry achieved by changing the composition of the electrolyte in which the samples are immersed. Using this approach the emission has been repeatedly cycled (> 100 times) between green and red.

引用

页码：3192 / 3194

页数：3

共 14 条

[11] CONTROL OF POROUS SI PHOTOLUMINESCENCE THROUGH DRY OXIDATION
SHIH, S
TSAI, C
LI, KH
JUNG, KH
CAMPBELL, JC
KWONG, DL
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (05) : 633 - 635
[12] THERMAL-TREATMENT STUDIES OF THE PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON
TSAI, C
LI, KH
SARATHY, J
SHIH, S
CAMPBELL, JC
HANCE, BK
WHITE, JM
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2814 - 2816
[13] TSAI C, 1992, J ELECTRON MATER, V21, P997
[14] POROUS SILICON FORMATION IN N-/N+/N- DOPED STRUCTURES
TSAO, SS
GUILINGER, TR
KELLY, MJ
KAUSHIK, VS
DATYE, AK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (06) : 1739 - 1743

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