CLASSIFICATION OF DEFECTS IN SILICON AFTER THEIR G-VALUES

被引：56

作者：

SIEVERTS, EG

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 120卷 / 01期

关键词：

D O I：

10.1002/pssb.2221200102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：11 / 29

页数：19

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