A GAAS-FET MODEL FOR LARGE-SIGNAL APPLICATIONS

被引：22

作者：

PETERSON, DL ^{[1
]}

PAVIO, AM ^{[1
]}

KIM, B ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS,CENT RES LABS,DALLAS,TX 75266

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1984年 / 32卷 / 03期

关键词：

D O I：

10.1109/TMTT.1984.1132665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / 281

页数：6

共 8 条

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MADJAR A, 1981, IEEE T MICROWAVE THE, V29, P791

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[5] GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].

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[6] RF CHARACTERIZATION OF MICROWAVE-POWER FETS [J].

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (08) :776-781

[7] TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET [J].

WILLING, HA ;

RAUSCHER, C ;

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[8]

1982, SUPER COMPACT USER M

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