AR ION-BEAM AND CCL4 REACTIVE ION ETCHING - A COMPARISON OF ETCHING DAMAGE AND OF DAMAGE PASSIVATION BY HYDROGEN

被引：23

作者：

MU, XC

FONASH, SJ

YANG, BY

VEDAM, K

ROHATGI, A

RIEGER, J

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4282 / 4291

页数：10

共 18 条

[1] AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

STUDNA, AA .

SURFACE SCIENCE, 1980, 96 (1-3) :294-306

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[3]

CLIMENT A, 1984, MATER RES SOC S P, V25

[4] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J].

COBURN, JW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5210-5213

[5]

DANNOIS A, 1978, PHYS REV, V183, P1824

[6]

DAVIS RJ, 1984, MATERIALS RES SOC S, V25, P607

[7] SILICON DAMAGE CAUSED BY CCL4 REACTIVE ION ETCHING - ITS CHARACTERIZATION AND REMOVAL BY RAPID THERMAL ANNEALING [J].

FONASH, SJ ;

SINGH, R ;

ROHATGI, A ;

RAICHOUDHURY, P ;

CAPLAN, PJ ;

POINDEXTER, EH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :862-866

[8]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[9]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[10] EFFECT OF NEUTRAL ION-BEAM SPUTTERING AND ETCHING ON SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

THIN SOLID FILMS, 1982, 90 (03) :231-235

← 1 2 →