SILICON DAMAGE CAUSED BY CCL4 REACTIVE ION ETCHING - ITS CHARACTERIZATION AND REMOVAL BY RAPID THERMAL ANNEALING

被引：19

作者：

FONASH, SJ

SINGH, R

ROHATGI, A

RAICHOUDHURY, P

CAPLAN, PJ

POINDEXTER, EH

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

[2] USA,ELECTR RES & DEV COMMAND,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：862 / 866

页数：5

共 18 条

[1] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J].

ASHOK, S ;

CHOW, TP ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :687-689

[2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[3] ULTRAVIOLET BLEACHING AND REGENERATION OF SI=SI3 CENTERS AT THE SI/SIO2 INTERFACE OF THINLY OXIDIZED SILICON-WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

MORRISON, SR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :541-545

[4]

CAPLAN PJ, 1983, PROG SURF SCI, V14, P201

[5] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF3 GAS-MIXTURES [J].

CHOW, TP ;

ASHOK, S ;

BALIGA, BJ ;

KATZ, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) :156-160

[6]

DAVIS RJ, 1984, P MRC S THIN FILMS I, V25, P607

[7]

FONASH SJ, 1985, SOLID STATE TECH APR, P201

[8]

Maissel L.I., 1970, HDB THIN FILM TECHNO

[9] ELLIPSOMETRIC CHARACTERIZATION OF SI SURFACE DAMAGE INDUCED BY SPUTTER ETCHING [J].

OHIRA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1201-1206

[10] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J].

POINDEXTER, EH ;

CAPLAN, PJ ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :879-884

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