MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING IN NF3 GAS-MIXTURES

被引：12

作者：

CHOW, TP ^{[1
]}

ASHOK, S ^{[1
]}

BALIGA, BJ ^{[1
]}

KATZ, W ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 01期

关键词：

D O I：

10.1149/1.2115499

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：156 / 160

页数：5

共 14 条

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CHOW, TP ;

BALIGA, BJ .

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[2]

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BOWER, DH .

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[4] PLASMA-ETCHING OF SPUTTERED MO AND MOSI2 THIN-FILMS IN NF3 GAS-MIXTURES [J].

CHOW, TP ;

STECKL, AJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5531-5540

[5] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[6] REACTIVE ION ETCHING FOR VLSI [J].

EPHRATH, LM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1315-1319

[7] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

[8] DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION [J].

GREEUW, G ;

VERWEY, JF .

SOLID-STATE ELECTRONICS, 1983, 26 (03) :241-246

[9]

IANNO NJ, 1980, J ELECTROCHEM SOC, V128, P2174

[10]

PANG S, 1982, ELECTROCHEMICAL SOC, V82, P289

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