MOBILITY MODULATION IN A QUASI-ONE-DIMENSIONAL SI-MOSFET WITH A DUAL-GATE STRUCTURE

被引：7

作者：

MATSUOKA, H ^{[1
]}

ICHIGUCHI, T ^{[1
]}

YOSHIMURA, T ^{[1
]}

TAKEDA, E ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期

关键词：

D O I：

10.1109/55.144938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical transport characteristics of a quasi-one-dimensional Si-MOSFET with a dual-gate structure are studied. In this device, the width of the one-dimensional channel can be changed continuously using the field effect and the intervals between one-dimensional subbands as well. By making part of the channel narrower, strong oscillations in differential conductance, even negative differential conductance, have been observed at 4.2 K, indicating the enhanced modulation of the electron mobility by inter-subband scattering suppression.

引用

页码：20 / 22

页数：3

共 11 条

[1] OBSERVATION OF RESONANT TUNNELING IN SILICON INVERSION-LAYERS
FOWLER, AB
TIMP, GL
WAINER, JJ
WEBB, RA
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (01) : 138 - 141
[2] ONE-DIMENSIONAL SUBBAND EFFECTS IN THE CONDUCTANCE OF MULTIPLE QUANTUM WIRES IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
GAO, JR
DEGRAAF, C
CARO, J
RADELAAR, S
OFFENBERG, M
LAUER, V
SINGLETON, J
JANSSEN, TJBM
PERENBOOM, JAAJ
[J]. PHYSICAL REVIEW B, 1990, 41 (17): : 12315 - 12318
[3] QUANTIZED ELECTRON-TRANSPORT IN AMORPHOUS-SILICON MEMORY STRUCTURES
HAJTO, J
OWEN, AE
GAGE, SM
SNELL, AJ
LECOMBER, PG
ROSE, MJ
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (14) : 1918 - 1921
[4] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN NARROW SI ACCUMULATION LAYERS
KAPLAN, SB
HARTSTEIN, A
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (22) : 2403 - 2406
[5] Matsuoka H., 1990, Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, P369
[6] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN SILICON INVERSION-LAYER NANOSTRUCTURES
SKOCPOL, WJ
MANKIEWICH, PM
HOWARD, RE
JACKEL, LD
TENNANT, DM
STONE, AD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (26) : 2865 - 2868
[7] Takeda E., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P387, DOI 10.1109/IEDM.1990.237150
[8] QUANTIZED CONDUCTANCE OF POINT CONTACTS IN A TWO-DIMENSIONAL ELECTRON-GAS
VANWEES, BJ
VANHOUTEN, H
BEENAKKER, CWJ
WILLIAMSON, JG
KOUWENHOVEN, LP
VANDERMAREL, D
FOXON, CT
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (09) : 848 - 850
[9] QUASI ONE-DIMENSIONAL CONDUCTION IN MULTIPLE, PARALLEL INVERSION LINES
WARREN, AC
ANTONIADIS, DA
SMITH, HI
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (17) : 1858 - 1861
[10] ONE-DIMENSIONAL TRANSPORT AND THE QUANTIZATION OF THE BALLISTIC RESISTANCE
WHARAM, DA
THORNTON, TJ
NEWBURY, R
PEPPER, M
AHMED, H
FROST, JEF
HASKO, DG
PEACOCK, DC
RITCHIE, DA
JONES, GAC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (08): : L209 - L214

← 1 2 →