FORMATION OF SINGLE-PHASE INDIUM SELENIDE THIN-FILMS BY ELEMENTAL EVAPORATION

被引：40

作者：

THOMAS, B ^{[1
]}

KUTTY, TRN ^{[1
]}

机构：

[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 01期

关键词：

D O I：

10.1002/pssa.2211190115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of crystalline, monophasic indium selenide (InSe) thin solid films by elemental evaporation on hot glass substrates (400 to 530 K) is reported. The compound formation as well as the composition of the formed films are confirmed by X‐ray photoelectron spectroscopy (XPS) analysis. The crystallinity of the rhombohedral InSe films can be improved by post‐depositional annealing for t < 30 min at 533 K. The InSe thin films become Se‐deficient at higher temperatures of deposition or longer duration of annealing. Optical studies reveal the bandgap to be around 1.29 eV. Under optimum conditions of preparations the lowest resistivity of ≈ 12.8 Ω cm is obtained. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：127 / 138

页数：12

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