PHOTO-VOLTAIC EFFECT IN GOLD-INDIUM SELENIDE SCHOTTKY BARRIERS

被引：65

作者：

DIGIULIO, M ^{[1
]}

MICOCCI, G ^{[1
]}

RIZZO, A ^{[1
]}

TEPORE, A ^{[1
]}

机构：

[1] CNR,GRUPPO NAZL STRUTTURA MAT,LECCE,ITALY

来源：

关键词：

D O I：

10.1063/1.331808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5839 / 5843

页数：5

共 11 条

[1] ELECTRICAL-PROPERTIES OF INDIUM SELENIDE SINGLE-CRYSTALS
DEBLASI, C
MICOCCI, G
RIZZO, A
TEPORE, A
[J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2429 - 2434
[2] LARGE INSE SINGLE-CRYSTALS GROWN FROM STOICHIOMETRIC AND NONSTOICHIOMETRIC MELTS
DEBLASI, C
MICOCCI, G
MONGELLI, S
TEPORE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) : 482 - 486
[3] PHOTOCONDUCTIVITY OF INSE SINGLE-CRYSTALS
DEBLASI, C
MICOCCI, G
RIZZO, A
TEPORE, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01): : 291 - 296
[4] The analysis of photoelectric sensitivity curves for clean metals at various temperatures
Fowler, RH
[J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56
[5] ELECTRICAL AND OPTICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER ON A CLEAVED SURFACE OF THE LAYERED SEMICONDUCTOR INSE
HASEGAWA, Y
ABE, Y
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02): : 615 - 621
[6] Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11
[7] TRAPPING CENTER PARAMETERS IN INDIUM SELENIDE SINGLE-CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS
MICOCCI, G
RIZZO, A
TEPORE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1924 - 1929
[8] PHOTO-VOLTAIC EFFICIENCY OF INSE SOLAR-CELLS
SEGURA, A
CHEVY, A
GUESDON, JP
BESSON, JM
[J]. SOLAR ENERGY MATERIALS, 1980, 2 (02): : 159 - 165
[9] PHOTO-VOLTAIC EFFECT IN INSE APPLICATION TO SOLAR-ENERGY CONVERSION
SEGURA, A
GUESDON, JP
BESSON, JM
CHEVY, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (01): : 253 - 257
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO