BREAKTHROUGH ANGLES FOR PLANAR CHANNELED PROTONS IN SILICON AND DIAMOND

被引：9

作者：

SCHMIEDESKAMP, B ^{[1
]}

JONK, P ^{[1
]}

ROOSENDAAL, HE ^{[1
]}

LUTZ, HO ^{[1
]}

机构：

[1] N HOLLAND PHYS PUBLISHING,1000 AC AMSTERDAM,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 17卷 / 04期

关键词：

D O I：

10.1016/0168-583X(86)90117-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：309 / 313

页数：5

共 11 条

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[9] PLANAR CHANNELING TRAJECTORIES IN DIAMOND AND SILICON [J].

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[10] HALF-WAVELENGTH AND STOPPING POWER FOR PLANAR-CHANNELED PROTONS IN SILICON AND DIAMOND SINGLE-CRYSTALS [J].

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