POTENTIAL AND STOPPING POWER INFORMATION FROM ION CHANNELING IN GE

被引:12
作者
CULBERTSON, RJ
WITHROW, SP
BARRETT, JH
机构
关键词
D O I
10.1016/0168-583X(84)90146-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:19 / 24
页数:6
相关论文
共 17 条
[1]   BACKSCATTERING STUDY AND THEORETICAL INVESTIGATION OF PLANAR CHANNELING PROCESSES .1. EXPERIMENTAL RESULTS [J].
ABEL, F ;
AMSEL, G ;
BRUNEAUX, M ;
COHEN, C ;
LHOIR, A .
PHYSICAL REVIEW B, 1975, 12 (11) :4617-4627
[2]  
ABEL F, 1973, CR ACAD SCI B PHYS, V276, P267
[3]   SIMPLE METHOD FOR FITTING DATA WHEN BOTH VARIABLES HAVE UNCERTAINTIES [J].
BARKER, DR ;
DIANA, LM .
AMERICAN JOURNAL OF PHYSICS, 1974, 42 (03) :224-227
[4]   POTENTIAL AND STOPPING-POWER INFORMATION FROM PLANAR-CHANNELING OSCILLATIONS [J].
BARRETT, JH .
PHYSICAL REVIEW B, 1979, 20 (09) :3535-3542
[5]   MONTE CARLO CHANNELING CALCULATIONS [J].
BARRETT, JH .
PHYSICAL REVIEW B, 1971, 3 (05) :1527-&
[6]  
BOGH E, 1972, RADIAT EFF, V12, P13
[7]   CHANNELING IN DIAMOND AT HIGH DEPTH RESOLUTION [J].
EDGE, RD ;
FEARICK, RW ;
DERRY, TE ;
SELLSCHOP, JPF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :133-137
[8]  
FIRSOV OB, 1958, SOV PHYS JETP-USSR, V6, P534
[9]   OSCILLATORY CHANNELED-ION SCATTERING YIELD IN BERYLLIUM [J].
KAUFMANN, EN .
PHYSICAL REVIEW B, 1978, 17 (03) :1024-1027
[10]   MEASUREMENTS OF THE RATIO BETWEEN PLANAR AND RANDOM STOPPING POWER FOR 80 TO 300 KEV PROTONS IN SILICON [J].
KUHRT, E ;
TAUBNER, F .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :513-519