ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND 5-LAYER HETEROSTRUCTURE (GAAL)AS-GAAS INJECTION LASERS

被引：28

作者：

THOMPSON, GHB ^{[1
]}

KIRKBY, PA ^{[1
]}

WHITEAWAY, JEA ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,LONDON RD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：481 / 488

页数：8

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[3] MODE CONVERSION CAUSED BY SURFACE IMPERFECTIONS OF A DIELECTRIC SLAB WAVEGUIDE
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[4] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS
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[5] (GAAL) AS LASERS WITH A HETEROSTRUCTURE FOR OPTICAL CONFINEMENT AND ADDITIONAL HETEROJUNCTIONS FOR EXTREME CARRIER CONFINEMENT
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 311 - 318
[6] THOMPSON GHB, 1973, ELECTRON LETT, V9, P904