X-RAY BOND-TYPE DIFFRACTOMETER INVESTIGATIONS ON V3O5 IN THE TEMPERATURE INTERVAL 298 TO 480-K INCLUDING THE PHASE-TRANSITION TEMPERATURE TT = 428-K

被引：8

作者：

ASBRINK, S ^{[1
]}

WOLCYRZ, M ^{[1
]}

HONG, SH ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST LOW TEMP & STRUCT RES,DEPT CRYSTALLOG,PL-50950 WROCLAW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 01期

关键词：

D O I：

10.1002/pssa.2210870111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 140

页数：6

共 12 条

[1] STUDIES ON VANADIUM OXIDES .1. PHASE ANALYSIS [J].

ANDERSSON, G .

ACTA CHEMICA SCANDINAVICA, 1954, 8 (09) :1599-1606

[2] INCREASE OF X-RAY REFLECTION INTENSITIES AND PROFILE WIDTHS AT THE LOW-V3O5 TO HIGH-V3O5 PHASE-TRANSITION STATE [J].

ASBRINK, S ;

HONG, SH .

NATURE, 1979, 279 (5714) :624-625

[3] THE CRYSTAL-STRUCTURE OF AND VALENCY DISTRIBUTION IN THE LOW-TEMPERATURE MODIFICATION OF V3O5 - THE DECISIVE IMPORTANCE OF A FEW VERY WEAK REFLECTIONS IN A CRYSTAL-STRUCTURE DETERMINATION [J].

ASBRINK, S .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1980, 36 (JUN) :1332-1339

[4] INSULATOR-METAL TRANSITION IN V3O5 [J].

CHUDNOVSKII, FA ;

TERUKOV, EI ;

KHOMSKII, DI .

SOLID STATE COMMUNICATIONS, 1978, 25 (08) :573-577

[5] A DEVICE FOR ACCURATE SINGLE-CRYSTAL X-RAY-DIFFRACTION INVESTIGATIONS AT NON-AMBIENT TEMPERATURES - 83-1120-K [J].

HONG, SH ;

ASBRINK, S .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1981, 14 (FEB) :43-50

[6] THE STRUCTURE OF THE HIGH-TEMPERATURE MODIFICATION OF V3O5 AT 458K [J].

HONG, SH ;

ASBRINK, S .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1982, 38 (MAR) :713-719

[7] CRYSTALLOGRAPHY OF VNO2N-1 (3 LESS THAN OR EQUAL TO N LESS THAN OR EQUAL TO 8) [J].

HORIUCHI, H ;

TOKONAMI, M ;

MORIMOTO, N ;

NAGASAWA, K ;

BANDO, Y ;

TAKADA, T .

MATERIALS RESEARCH BULLETIN, 1971, 6 (09) :833-&

[8] NEW MODEL OF BOND DIFFRACTOMETER FOR PRECISE DETERMINATION OF LATTICE-PARAMETERS AND THERMAL-EXPANSION OF SINGLE-CRYSTALS [J].

LUKASZEWICZ, K ;

KUCHARCZYK, D ;

MALINOWSKI, M ;

PIETRASZKO, A .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (05) :561-567

[9] CRYSTAL GROWTH OF VNO2N-1 (3 LESS THAN OR EQUAL TO N LESS THAN OR EQUAL TO 8) BY CHEMICAL TRANSPORT REACTION AND ELECTRICAL PROPERTIES [J].

NAGASAWA, K .

MATERIALS RESEARCH BULLETIN, 1971, 6 (09) :853-&

[10]

Nye J.F, 1957, PHYS PROPERTIES CRYS

← 1 2 →