STRAINED INAS/INP QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：10

作者：

XING, QJ ^{[1
]}

BREBNER, JL ^{[1
]}

MASUT, RA ^{[1
]}

AHMAD, G ^{[1
]}

ZHAO, G ^{[1
]}

TRAN, CA ^{[1
]}

ISNARD, L ^{[1
]}

机构：

[1] GRP RECH PHYS & TECHNOL COUCHES MINCES,MONTREAL H3C 3J7,PQ,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600X200 mum broad area laser device. The characteristic temperature T0 was found to be 190 K between 100 and 130 K, and 147 K between 130 and 300 K. The lasing wavelength was 1.7 mum at room temperature.

引用

页码：567 / 569

页数：3

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