HIGH-POWER LOW-THRESHOLD GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE ALGAAS SINGLE QUANTUM WELL LASERS ON SI SUBSTRATES

被引：5

作者：

KIM, JH ^{[1
]}

LANG, RJ ^{[1
]}

RADHAKRISHNAN, G ^{[1
]}

KATZ, J ^{[1
]}

NARAYANAN, AA ^{[1
]}

CRAIG, RR ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.101587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1492 / 1494

页数：3

共 9 条

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[5] HIGH-PEAK-POWER LOW-THRESHOLD ALGAAS/GAAS STRIPE LASER-DIODES ON SI SUBSTRATES GROWN BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

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[6] GROWTH AND CHARACTERIZATION OF GAAS-LAYERS ON SI SUBSTRATES BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (24) :2435-2437

[7] HIGH-POWER ALGAAS GAAS DH STRIPE LASER-DIODES ON GAAS-ON-SI PREPARED BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

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[8]

SAKAI S, 1988, APPL PHYS LETT, V53, P1203

[9] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

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