HIGH-PEAK-POWER LOW-THRESHOLD ALGAAS/GAAS STRIPE LASER-DIODES ON SI SUBSTRATES GROWN BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY

被引：8

作者：

KIM, JH

NOUHI, A

RADHAKRISHNAN, G

LIU, JK

LANG, RJ

KATZ, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.99992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1248 / 1250

页数：3

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