HIGH-POWER ALGAAS GAAS DH STRIPE LASER-DIODES ON GAAS-ON-SI PREPARED BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY

被引：7

作者：

KIM, JH

RADHAKRISHNAN, G

NOUHI, A

LIU, JK

LANG, RJ

KATZ, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：791 / 796

页数：6

共 16 条

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[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

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[6] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS [J].

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[7] HIGH-PEAK-POWER LOW-THRESHOLD ALGAAS/GAAS STRIPE LASER-DIODES ON SI SUBSTRATES GROWN BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

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[8] GROWTH AND CHARACTERIZATION OF GAAS-LAYERS ON SI SUBSTRATES BY MIGRATION-ENHANCED MOLECULAR-BEAM EPITAXY [J].

KIM, JH ;

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[9]

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[10]

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