A STUDY OF THERMAL-VOLTAGE MEMORY EFFECTS IN M-I-M STRUCTURES WITH CO-EVAPORATED SIO/B2O3 AS THE INSULATOR MATERIAL

被引：9

作者：

HOGARTH, CA

KOMPANY, A

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1982年 / 53卷 / 04期

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D O I：

10.1080/00207218208901517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：301 / 309

页数：9

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