RADIATIVE RECOMBINATION EFFICIENCIES IN GA(AS,P)-N AND (IN,GA)P-N

被引:14
作者
KLEIMAN, GG [1 ]
机构
[1] GM CORP,RES LABS,WARREN,MI 48090
关键词
D O I
10.1063/1.322342
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:180 / 189
页数:10
相关论文
共 36 条
[1]  
[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[2]   RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
PHYSICAL REVIEW B, 1973, 7 (02) :700-713
[3]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[4]  
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P182
[5]   BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J].
CAMPBELL, JC ;
HOLONYAK, N ;
CRAFORD, MG ;
KEUNE, DL .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4543-4553
[6]   EFFECT OF CRYSTAL COMPOSITION ON QUASIDIRECT RECOMBINATION AND LED PERFORMANCE IN INDIRECT REGION OF GAAS1-XPX-N [J].
CAMPBELL, JC ;
HOLONYAK, N ;
KUNZ, AB ;
CRAFORD, MG .
APPLIED PHYSICS LETTERS, 1974, 25 (01) :44-47
[7]   MODEL CALCULATIONS FOR RADIATIVE RECOMBINATION IN ZN-N-DOPED GAAS1-XPX IN DIRECT AND INDIRECT COMPOSITION REGION [J].
CAMPBELL, JC ;
HOLONYAK, N ;
KUNZ, AB ;
CRAFORD, MG .
PHYSICAL REVIEW B, 1974, 9 (10) :4314-4322
[8]  
Conwell E M, 1967, HIGH FIELD TRANSPORT
[9]  
Craford M. G., 1973, Journal of Electronic Materials, V2, P137, DOI 10.1007/BF02658108
[10]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&