SHALLOW TRAPS AND THE D- CENTER IN GE-SB FAR-INFRARED PHOTOCONDUCTIVITY STUDIES BELOW 1-K

被引：6

作者：

SCHIFF, EA

机构：

[1] CORNELL UNIV, CTR MAT SCI, ITHACA, NY 14853 USA

[2] CORNELL UNIV, ATOM & SOLID STATE PHYS LAB, ITHACA, NY 14853 USA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 45卷 / 01期

关键词：

D O I：

10.1080/13642818208246389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：69 / 93

页数：25

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