ELECTRICAL PROPERTIES OF CARRIER GENERATION-RECOMBINATION CENTERS IN SILICON P-N JUNCTIONS

被引：6

作者：

SATO, S

KAWAJI, S

机构：

来源：

关键词：

D O I：

10.1063/1.1713946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3779 / +

页数：1

共 9 条

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[7]

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