SCATTERING MATRIX ANALYSIS OF ELECTRON-TRANSPORT IN DISORDERED AHARONOV-BOHM INTERFEROMETERS AND BALLISTIC CONSTRICTIONS

被引:5
作者
CAHAY, M
BANDYOPADHYAY, S
FROHNE, HR
机构
[1] UNIV NOTRE DAME,DEPT ELECT & COMP ENGN,NOTRE DAME,IN 46556
[2] WALLA WALLA COLL,SCH ENGN,COLLEGE PL,WA 99324
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期
关键词
D O I
10.1116/1.585085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a fully quantum-mechanical analysis of phase-coherent electron transport in disordered semiconductor nanostructures. The analysis is based on a scattering matrix formalism which allows us to simulate the effects of interface roughness scattering, as well as scattering from point defects and defect clusters. Using this technique, we have studied quantum conduction in electrostatic Aharonov-Bohm interferometers and narrow ballistic constrictions of submicron dimensions.
引用
收藏
页码:1399 / 1403
页数:5
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