IMPEDANCE-CORRECTED CARRIER LIFETIME MEASUREMENTS IN SEMICONDUCTOR-LASERS

被引：22

作者：

SHTENGEL, GE

ACKERMAN, DA

MORTON, PA

FLYNN, EJ

HYBERTSEN, MS

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Differential carrier lifetime as a function of subthreshold bias current in 1.3 m bulk active lasers is obtained by measurement of small-signal modulation of amplified spontaneous emission together with careful characterization of frequency- and current-dependent device impedance. The strong influence of rapidly varying device impedance upon these measurements is illustrated. In contrast to other studies, neither saturation of differential lifetime at low currents nor linear dependence of spontaneous emission on carrier density is observed. Recombination parameters, fit from current versus carrier density, along with consistent fits of spontaneous emission versus carrier density, are presented. (C) 1995 American Institute of Physics.

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页码：1506 / 1508

页数：3

相关论文

共 15 条

[1] ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS [J].

ACKERMAN, DA ;

SHTENGEL, GE ;

HYBERTSEN, MS ;

MORTON, PA ;

KAZARINOV, RF ;

TANBUNEK, T ;

LOGAN, RA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :250-263

[2]

FLYNN ER, UNPUB

[3] APPROXIMATE DEPENDENCE OF THE SPONTANEOUS EMISSION RATE ON ELECTRON AND HOLE CONCENTRATIONS [J].

GRINBERG, AA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (05) :1151-1155

[4]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[5] ELECTRICAL CHARACTERIZATION OF HETEROSTRUCTURE LASERS [J].

JOYCE, WB ;

DIXON, RW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3719-3728

[6] INTRINSIC EQUIVALENT-CIRCUIT OF QUANTUM-WELL LASERS [J].

KAN, SC ;

LAU, KY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :528-530

[7] THE INTRINSIC ELECTRICAL EQUIVALENT-CIRCUIT OF A LASER DIODE [J].

KATZ, J ;

MARGALIT, S ;

HARDER, C ;

WILT, D ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :4-7

[8] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J].

KONNERTH, K ;

LANZA, C .

APPLIED PHYSICS LETTERS, 1964, 4 (07) :120-&

[9] IMPEDANCE CHARACTERISTICS OF DOUBLE-HETERO STRUCTURE LASER-DIODES [J].

MORISHITA, M ;

OHMI, T ;

NISHIZAWA, J .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :951-962

[10] MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATES IN INGAASP AND ALGAAS LIGHT-SOURCES [J].

OLSHANSKY, R ;

SU, CB ;

MANNING, J ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :838-854