HIGH-PERFORMANCE 8-14-MUM PB1-XSNXTE PHOTODIODES

被引：29

作者：

KENNEDY, CA ^{[1
]}

LINDEN, KJ ^{[1
]}

SODERMAN, DA ^{[1
]}

机构：

[1] RAYTHEON CO,SPECIAL MICROWAVE DEVICES OPERATION,WALTHAM,MA 02154

来源：

关键词：

D O I：

10.1109/PROC.1975.9705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 32

页数：6

共 19 条

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[15] Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]
[16] NILL KW, 1971, PHYSICS SEMIMETALS N, P385
[17] RAVICH YI, 1970, SEMICONDUCTING LEAD, P34
[18] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES
ROLLS, WH
EDDOLLS, DV
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[19] SINGLE HETEROJUNCTION PB1- SN TE DIODE LASERS
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