MEMORY LOSS IN MNOS CAPACITORS

[1] DORDA G, 1970, PHYS STATUS SOLIDI A, V1, P65

[2] FERRISPRABHU AV, 1973, IBM J RES DEV, V21, P125

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[4] INFLUENCE OF DEVICE PARAMETERS ON MEMORY PERFORMANCE OF MNOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) : 555 - +

[5] LUNDKVIST I, 1973, SOLID STATE ELECTRON, V16, P811

[6] LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[7] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284

[8] MAES H, 1974, THESIS KATHOLIEKE U

[9] ROSS EC, 1969, RCA REV, V30, P366

[10] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (01) : 1 - 10

[1] DORDA G, 1970, PHYS STATUS SOLIDI A, V1, P65

[2] FERRISPRABHU AV, 1973, IBM J RES DEV, V21, P125

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[4] INFLUENCE OF DEVICE PARAMETERS ON MEMORY PERFORMANCE OF MNOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) : 555 - +

[5] LUNDKVIST I, 1973, SOLID STATE ELECTRON, V16, P811

[6] LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[7] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284

[8] MAES H, 1974, THESIS KATHOLIEKE U

[9] ROSS EC, 1969, RCA REV, V30, P366

[10] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (01) : 1 - 10