DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE

被引：10

作者：

BURNS, MJ ^{[1
]}

DELAHOUSSAYE, PR ^{[1
]}

RUSSELL, SD ^{[1
]}

GARCIA, GA ^{[1
]}

CLAYTON, SR ^{[1
]}

RUBY, WS ^{[1
]}

LEE, LP ^{[1
]}

机构：

[1] USN COMMAND,CTR CONTROL & OCEAN SURVEILLANCE,DIV RES DEV TEST & EVALUAT NRAD,SAN DIEGO,CA 92152

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary metal-oxide-semiconductor transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O7-delta flux-flow transistors, and separately, Y1Ba2Cu3O7-delta superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

引用

页码：1282 / 1284

页数：3