AN IMPROVED MODEL TO EXPLAIN OHMIC CONTACT RESISTANCE OF N-GAAS AND OTHER SEMICONDUCTORS - COMMENTS

Dingfen et al. report on the influence of a high-low barrier on the contact resistivity of metal-semiconductor structures. We point out that a similar study has already been published by us. However, we hypothesized thermionic emission as the dominant mode of carrier transport across the high-low barrier whereas Dingfen et al. employed diffusion theory to calculate the resistance of this barrier. In this note we argue that our theory interprets the published experimental data convincingly and thus the theory used by Dingfen et al. is questionable.