TRANSPORT ACROSS A HIGH-LOW BARRIER AND ITS INFLUENCE ON SPECIFIC CONTACT RESISTIVITY OF A METAL-N-GAAS OHMIC SYSTEM

被引：14

作者：

GUPTA, RP

KHOKLE, WS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：300 / 303

页数：4

共 36 条

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[3]

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[4]

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[5]

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SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[7] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J].

DILORENZO, JV ;

NIEHAUS, WC ;

CHO, AY .

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[8] NEW EXPLANATION OF ND-1 DEPENDENCE OF SPECIFIC CONTACT RESISTANCE FOR N-GAAS [J].

DINGFEN, W ;

HEIME, K .

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[9]

ECKHARDT G, 1980, LASER ELECTRON BEAM, P467

[10]

GOLD RB, 1979, LASER SOLID INTERACT, P635

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