NEW EXPLANATION OF ND-1 DEPENDENCE OF SPECIFIC CONTACT RESISTANCE FOR N-GAAS

被引：12

作者：

DINGFEN, W

HEIME, K

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 22期

关键词：

D O I：

10.1049/el:19820645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：940 / 941

页数：2

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[8] IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER [J].

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[9]

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