IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER

被引：24

作者：

VIDIMARI, F

机构：

[1] CISE SpA, Segrate, Milan

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 21期

关键词：

Gallium arsenide; Ohmic contacts;

D O I：

10.1049/el:19790479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The contact resistivity of AuGe contacts on n-type GaAs was reduced by about one order of magnitude by replacing the usual Ni top layer with an SiO2 layer. Surface coverage and edge definition of the contact areas can be optimised by a proper choice of process parameters, making this technology suitable for submicrometre device processing. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：674 / 676

页数：3

共 9 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[2] Braslau N., 1967, SOLID STATE ELECTRON, V10, P372
[3] GOLDBERG YA, 1970, SOV PHYS SEMICOND+, V3, P1447
[4] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
NANNICHI, Y
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &
[5] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS
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KONIG, U
KOHN, E
WORTMANN, A
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 835 - &
[6] LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS
OTSUBO, M
KUMABE, H
MIKI, H
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 617 - 621
[7] SHEUERMAN RJ, 1968, 134TH NAT M EL SOC M
[8] VIDIMARI F, 1979, APPL PHYS LETT, V35, P153
[9] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS
WITTMER, M
PRETORIUS, R
MAYER, JW
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 433 - &

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