LONG-RANGE ORDER IN THICK, UNSTRAINED SI0.5GE0.5 EPITAXIAL LAYERS

被引：95

作者：

LEGOUES, FK

KESAN, VP

IYER, SS

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.64.40

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe, for the first time, long-range order in thick, unstrained SiGe alloys, with and without boron doping. This ordering occurs along the four equivalent 111 directions. The ordered domains are randomly shaped, and corresponds to alternating double layers of Si and Ge. Bond energy arguments are used to explain the formation of this new phase. © 1990 The American Physical Society.

引用

页码：40 / 43

页数：4

共 13 条

[11] STABILITY OF ORDERED BULK AND EPITAXIAL SEMICONDUCTOR ALLOYS
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[13] BAND-GAP ENERGY ANOMALY AND SUBLATTICE ORDERING IN GAINP AND ALGAINP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2098 - 2106

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