INTEGRATED EXTERNAL-CAVITY INGAAS INP LASERS USING CAP-ANNEALING DISORDERING

被引：35

作者：

MIYAZAWA, T

IWAMURA, H

NAGANUMA, M

机构：

[1] NTT Opto-Electronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93865

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/InP multiple-quantum-well lasers were integrated with low-loss waveguides in the long-wavelength region using a cap-annealing disordering technique which does not require a regrowth process. The coupling efficiency between the lasers and waveguides was so high that the interconnecting joint between them does not increase the threshold current of the lasers. The optical loss in the waveguide was 7.8 cm-1 and was due to free-carrier absorption in the cladding layers.

引用

页码：421 / 423

页数：3

共 6 条

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