COMPOSITIONAL DISORDERING OF IN0.53GA0.47AS INP MULTIQUANTUM WELL STRUCTURES BY REPETITIVE RAPID THERMAL ANNEALING

被引：16

作者：

MIYAZAWA, T

IWAMURA, H

MIKAMI, O

NAGANUMA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 06期

关键词：

D O I：

10.1143/JJAP.28.L1039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1039 / L1041

页数：3

共 15 条

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[5]

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[6] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

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[7] SI-INDUCED DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS MULTIQUANTUM WELL STRUCTURES [J].

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MIKAMI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1731-L1733

[8]

MIYAZAWA Y, IN PRESS JPN J APP 2

[9] DEVICE CHARACTERISTICS OF GAALAS BURIED-MULTIQUANTUM-WELL LASERS FABRICATED BY ZN-DIFFUSION-INDUCED DISORDERING [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :629-633

[10] ZN-DIFFUSION-INDUCED INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (17) :1383-1385

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