SB-INDUCED INTERATOMIC BOND DISTANCE STABILIZATION ON INP(100) SURFACE

We have studied the formation of the Sb/InP(100) interface by photoemission extended x-ray absorption fine structure. Our results indicate that a low Sb coverage stretches and subsequently weakens P-In surface bonds which appears as a precursor stage prior to In-Sb bond formation. Then, at increasing Sb coverages, the substrate surface reconstructs with bonds approaching the relaxed clean InP(100) surface values. This results from the breakdown of In clusters (formed during surface preparation by ion sputtering) which leads to the formation of an InSb interface layer. The surface is finally found to be stabilized at higher Sb coverages with no more change in the substrate first and second near neighbor bond distances.