POSITION-SENSITIVE SEMICONDUCTOR PARTICLE DETECTORS FABRICATED BY ION IMPLANTATION

被引：26

作者：

LAEGSGAARD, E

MARTIN, FW

GIBSON, WM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 03期

关键词：

D O I：

10.1109/TNS.1968.4324943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：239 / +

页数：1

相关论文

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