SPECIFIC SINTERING BY TEMPERATURE IMPULSES AS A MECHANISM OF FORMATION OF A TIN LAYER IN THE REACTIVE PULSE PLASMA

被引：17

作者：

ROMANOWSKI, Z ^{[1
]}

WRONIKOWSKI, M ^{[1
]}

机构：

[1] CABLE FACTORY,PL-05850 OZAROW MAZOWIECK,POLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1992年 / 27卷 / 10期

关键词：

D O I：

10.1007/BF00540678

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A layer of separate TiN particles was fabricated and temperature pulsed in order to determine whether the short lasting intense heat of the deposited clusters can lead to their sintering. It was found that a specific sintering process is inseparably involved in the process of crystallization of the layer from the pulse plasma. The pulse heating also causes an increase in the adhesion of the layer to the substrate.

引用

页码：2619 / 2622

页数：4

共 4 条

[1] REACTIVE PULSE PLASMA CRYSTALLIZATION OF TIN LAYERS ON SUBSTRATES AT 500-K [J].