REINTERPRETATION OF DEGRADATION KINETICS OF AMORPHOUS-SILICON

[1] BUBE RH, UNPUB

[2] JACKSON W, 1988, MRS P, V118, P231

[3] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[4] BIAS DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1242 - 1244

[5] CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 398 - 399

[6] KINETICS, ENERGETICS, AND ORIGINS OF DEFECTS IN AMORPHOUS SI-H [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 492 - 494

[7] REDFIELD D, 1988, B AM PHYS SOC, V33, P389

[8] REDFIELD D, 1987, MRS P, V95, P95

[9] Street RA, 2011, MATER RES SOC S P, DOI 10.1557/proc-95-13

[10] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 23 - 47

[1] BUBE RH, UNPUB

[2] JACKSON W, 1988, MRS P, V118, P231

[3] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[4] BIAS DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1242 - 1244

[5] CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 398 - 399

[6] KINETICS, ENERGETICS, AND ORIGINS OF DEFECTS IN AMORPHOUS SI-H [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 492 - 494

[7] REDFIELD D, 1988, B AM PHYS SOC, V33, P389

[8] REDFIELD D, 1987, MRS P, V95, P95

[9] Street RA, 2011, MATER RES SOC S P, DOI 10.1557/proc-95-13

[10] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 23 - 47